Mmbt2222

Collector−Base Breakdown Voltage (IC = μAdc, IE = 0). ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in . VCBO collector-base voltage open emitter. VCEO collector-emitter voltage. Descubra a melhor forma de comprar online. General Purpose Transistors.

Si-Epi-Planar Schalttransistoren für die Oberflächenmontage. Boleto bancário ou Deposito em conta. Parameters and Characteristics. Free delivery on eligible orders of £or more.

A SOT-CASE GENERAL PURPOSE AMP SURFACE MOUNT COMP TO . Base current will contribute to dissipation, which sets a limit (not necessarily the limit). An Easier Electronic Circuit Design Experience. Check pricing, availability, lifecycles and datasheets at . View datasheets, stock and pricing, or find other GP BJT. NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Datasheet (data sheet) search for . Shandong Yiguang Electronic Joint stock Co.

NPN EPITAXIAL SILICON TRANSISTOR. Explore Discrete Semiconductors on Octopart: the fastest source for datasheets, pricing, . This ratings are limiting values above which the serviceability of any semiconductor . For information on tape and reel specifications, including part orientation and tape sizes, . BJT）トランジスタ NPN 30V 600mA 250MHz 350mW 面実装 SOT-23-3. Bipolarer Transistor (BJT) NPN 30V 600mA 2MHz 350mW Oberflächenmontage SOT-23-3.

Junction Temperature: -55C to 150C. Hong Kong Stock Exchange, Stock Code: 724). Product Category: Transistor. Descrizione: transistor NPN GP sot-23.

Transistor bipolar (BJT) NPN 30V 600mA 2MHz 350mW Montaje en superficie SOT-23-3. Faça seu pedido, pague-o online e receba onde quiser. Maximum ratings (TA = 25°C).

SOT- 塑封封装NPN 半导体三极管。Silicon NPN transistor in a SOT-Plastic . Radość zakupów i bezpieczeństwo.